Structure of pellicle-mask structure with vent structure

ABSTRACT

Structures of a pellicle-mask structure are provided. The pellicle-mask structure includes a mask substrate, a pellicle frame over the mask substrate. The pellicle frame includes a side portion with an inside surface and an outside surface opposite to each other. The pellicle-mask structure also includes a vent structure in the side portion and connecting the inside surface and the outside surface, and a pellicle membrane over the pellicle frame. The pellicle-mask structure further includes a pellicle membrane adhesive between the pellicle membrane and the pellicle frame, and a first heat-dissipating filler in the pellicle membrane adhesive.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of U.S. Provisional Application No.62/583,126, entitled “STRUCTURE OF PELLICLE-MASK STRUCTURE WITH VENTSTRUCTURE” filed on Nov. 8, 2017, the entirety of which is incorporatedherein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysubsequently depositing insulating or dielectric layers, conductivelayers, and semiconductive layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon.

One important driver for increasing performance in a semiconductordevice is the higher levels of integration of circuits. This isaccomplished by miniaturizing or shrinking device sizes on a given chip.Extreme ultraviolet (EUV) lithography technology has been developed inorder to transfer finer patterns onto wafers. The EUV lithographytechnology is considered a next-generation technology which will be usedto fabricate a slimmer and faster microchip.

However, although the existing EUV lithograph technology has beengenerally adequate for its intended purpose, as device scaling-downcontinues, it has not been entirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 shows a schematic view of a lithography system with ahigh-brightness light source, in accordance with some embodiments.

FIG. 2A is a cross-sectional view of a pellicle-mask structure inaccordance with some embodiments of the present disclosure.

FIG. 2B is a side view of a pellicle structure in accordance with someembodiments of the present disclosure.

FIG. 3A is a cross-sectional view of a vent structure in accordance withsome embodiments of the present disclosure.

FIG. 3B is a cross-sectional view of a vent structure in accordance withsome other embodiments of the present disclosure.

FIG. 3C is a cross-sectional view of a vent structure in accordance withsome other embodiments of the present disclosure.

FIG. 4A is a cross-sectional view of a pellicle membrane adhesive inaccordance with some embodiments of the present disclosure.

FIG. 4B is a cross-sectional view of a pellicle frame adhesive inaccordance with some embodiments of the present disclosure.

FIG. 5 is a cross-sectional view of a pellicle-mask structure inaccordance with some other embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, theperformance of a first process before a second process in thedescription that follows may include embodiments in which the secondprocess is performed immediately after the first process, and may alsoinclude embodiments in which additional processes may be performedbetween the first and second processes. Various features may bearbitrarily drawn in different scales for the sake of simplicity andclarity. Moreover, the formation of a first feature over or on a secondfeature in the description that follows may include embodiments in whichthe first and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formed betweenthe first and second features, such that the first and second featuresmay not be in direct contact. In some embodiments, the presentdisclosure may repeat reference numerals and/or letters in some variousexamples. This repetition is for the purpose of simplicity and clarityand does not in itself dictate a relationship between some variousembodiments and/or configurations discussed.

Furthermore, spatially relative terms, such as “beneath,” “below,”“lower,” “above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to otherelements or features as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Additional features can be added to the pellicle-mask structure. Some ofthe features described below can be replaced or eliminated for differentembodiments. Although some embodiments are discussed with operationsperformed in a particular order, these operations may be performed inanother logical order.

The advanced lithography process, method, and materials described in thecurrent disclosure can be used in many applications, including fin-typefield effect transistors (FinFETs). For example, the fins may bepatterned to produce a relatively close spacing between features, forwhich the above disclosure is well suited. In addition, spacers used informing fins of FinFETs can be processed according to the abovedisclosure.

FIG. 1 is a schematic and diagrammatic view of a lithography system 10,in accordance with some embodiments. The lithography system 10 may alsobe generically referred to as a scanner that is operable to performlithography exposing processes with respective radiation source andexposure mode.

The lithography system 10 includes a high-brightness light source 12, anilluminator 14, a mask stage 16, a mask 18, a projection optics module(or projection optics box (POB)) 20 and a substrate stage 24, inaccordance with some embodiments. The elements of the lithography system10 can be added to or omitted, and the embodiments of the presentdisclosure should not be limited by the embodiment.

The high-brightness light source 12 is configured to generate radianshaving a wavelength ranging between about 1 nm and about 200 nm. In oneparticular example, the high-brightness light source 12 generates an EUVlight with a wavelength centered at about 13.5 nm. Accordingly, in someembodiments, the high-brightness light source 12 is also referred to asEUV light source. However, it should be appreciated that thehigh-brightness light source 12 should not be limited to emitting EUVlight. The high-brightness light source 12 can be utilized to performany high-intensity photon emission from excited target material.

The term “about” typically means+/−20% of the stated value, moretypically +/−10% of the stated value, more typically +/−5% of the statedvalue, more typically +/−3% of the stated value, more typically +/−2% ofthe stated value, more typically +/−1% of the stated value and even moretypically +/−0.5% of the stated value. The stated value of the presentdisclosure is an approximate value. When there is no specificdescription, the stated value includes the meaning of “about”.

In various embodiments, the illuminator 14 includes various refractiveoptic components, such as a single lens or a lens system having multiplelenses (zone plates) or alternatively reflective optics (for EUVlithography system), such as a single mirror or a mirror system havingmultiple mirrors in order to direct light from the high-brightness lightsource 12 onto a mask stage 16, particularly to a mask 18 secured on themask stage 16. In the present embodiments where the high-brightnesslight source 12 generates light in the EUV wavelength range, reflectiveoptics is employed.

The mask stage 16 is configured to secure the mask 18. In someembodiments, the mask stage 16 includes an electrostatic chuck (e-chuck)to secure the mask 18. This is because the gas molecules absorb EUVlight and the lithography system for the EUV lithography patterning ismaintained in a vacuum environment to avoid EUV intensity loss. In thepresent disclosure, the terms mask, photomask, and reticle are usedinterchangeably. In the present embodiments, the mask 18 is a reflectivemask.

In some embodiments, a pellicle structure 28 is positioned over the mask18, as shown in FIG. 1. In some embodiments, the pellicle structure 28protects the mask 18 from particles and keeps the particles out of focusso that they do not produce an image, which may cause defects during thelithography process.

The projection optics module (or projection optics box (POB)) 20 isconfigured for imaging the pattern of the mask 18 on to a semiconductorwafer 22 secured on a substrate stage 24 of the lithography system 10.In some embodiments, the POB 20 has refractive optics (such as for a UVlithography system) or alternatively reflective optics (such as for anEUV lithography system) in various embodiments. The light directed fromthe mask 18, carrying the image of the pattern defined on the mask, iscollected by the POB 20. The illuminator 14 and the POB 20 arecollectively referred to as an optical module of the lithography system10.

In some embodiments, the semiconductor wafer 22 is a bulk semiconductorwafer. For example, the semiconductor wafer 22 is a silicon wafer. Thesemiconductor wafer 22 may include silicon or another elementarysemiconductor material such as germanium. In some other embodiments, thesemiconductor wafer 22 includes a compound semiconductor. The compoundsemiconductor may include gallium arsenide, silicon carbide, indiumarsenide, indium phosphide, another suitable material, or a combinationthereof.

In some embodiments, the semiconductor wafer 22 includes asemiconductor-on-insulator (SOI) substrate. The SOI substrate may befabricated using a separation by implantation of oxygen (SIMOX) process,a wafer bonding process, another applicable method, or a combinationthereof.

In some embodiments, the semiconductor wafer 22 is an un-dopedsubstrate. However, in some other embodiments, the semiconductor wafer22 is a doped substrate such as a P-type substrate or an N-typesubstrate.

In some embodiments, the semiconductor wafer 22 includes various dopedregions (not shown) depending on design requirements of thesemiconductor device structure. The doped regions include, for example,p-type wells and/or n-type wells. In some embodiments, the doped regionsare doped with p-type dopants. For example, the doped regions are dopedwith boron or BF₂. In some embodiments, the doped regions are doped withn-type dopants. For example, the doped regions are doped with phosphoror arsenic. In some embodiments, some of the doped regions are p-typedoped, and the other doped regions are n-type doped.

In some embodiments, an interconnection structure is formed over thesemiconductor wafer 22. The interconnection structure includes multipleinterlayer dielectric layers including dielectric layers. Theinterconnection structure also includes multiple conductive featuresformed in the interlayer dielectric layers. The conductive features mayinclude conductive lines, conductive vias, and/or conductive contacts.

In some embodiments, various device elements are formed in thesemiconductor wafer 22. Examples of the various device elements includetransistors (e.g., metal oxide semiconductor field effect transistors(MOSFET), complementary metal oxide semiconductor (CMOS) transistors,bipolar junction transistors (BJT), high-voltage transistors,high-frequency transistors, p-channel and/or n-channel field effecttransistors (PFETs/NFETs), etc.), diodes, or other suitable elements.Various processes may be used to form the various device elements,including deposition, etching, implantation, photolithography,annealing, and/or other applicable processes.

The device elements are interconnected through the interconnectionstructure over the semiconductor wafer 22 to form integrated circuitdevices. The integrated circuit devices include logic devices, memorydevices (e.g., static random access memories, SRAMs), radio frequency(RF) devices, input/output (I/O) devices, system-on-chip (SoC) devices,image sensor devices, other applicable types of devices, or acombination thereof.

In some embodiments, the semiconductor wafer 22 is coated with a resistlayer sensitive to the EUV light In the present embodiments. Variouscomponents including those described above are integrated together andare operable to perform lithography exposing processes.

FIG. 2A is a cross-sectional view of a pellicle-mask structure 100 inaccordance with some embodiments of the present disclosure. FIG. 2B is aside view of a pellicle structure 28 in accordance with some embodimentsof the present disclosure. It should be noted that the mask 18 is notshown in FIG. 2B in order to clearly describe the embodiments of thepresent disclosure. It should be noted that the pellicle membraneadhesive and the pellicle frame adhesive are also not shown in FIG. 2Bin order to clearly describe the embodiments of the present disclosure.

As shown in FIGS. 2A and 2B, pellicle-mask structure 100 includes themask 18, in accordance with some embodiments. As shown in FIG. 2A, themask 18 includes a mask substrate 102 and a mask pattern 104 positionedover the mask substrate 102, in accordance with some embodiments.

In some embodiments, mask substrate 102 is a transparent substrate, suchas fused silica (SiO₂) relatively free of defects, borosilicate glass,soda-lime glass, calcium fluoride, low thermal expansion material,ultra-low expansion material, or other applicable materials. Maskpattern 104 positioned over the mask substrate 102 may be designedaccording to integrated circuit features to be formed over asemiconductor substrate during a lithography patterning process. Maskpattern 104 may be formed by depositing a material layer and patterningthe material layer to have one or more openings where radiation beamsmay travel through without being absorbed, and one or more absorptionareas where the radiation beams may be completely or partially blockedthereby.

The mask pattern 104 may include metal, metal alloy, metal silicide,metal nitride, metal oxide, metal oxynitride or other applicablematerials. Examples of materials used to form mask pattern 104 mayinclude, but are not limited to, Cr, Mo_(x)Si_(y), Ta_(x)Si_(y), Mo,Nb_(x)O_(y), Ti, Ta, Cr_(x)N_(y), Mo_(x)O_(y), Mo_(x)N_(y), Cr_(x)O_(y),Ti_(x)N_(y), Zr_(x)N_(y), Ti_(x)O_(y), Ta_(x)N_(y), Ta_(x)O_(y),Si_(x)O_(y), Nb_(x)N_(y), Si_(x)N_(y), Zr_(x)N_(y), Al_(x)O_(y)N_(z),Ta_(x)B_(y)O_(z), Ta_(x)B_(y)N_(z), Ag_(x)O_(y), Ag_(x)N_(y), Ni,Ni_(x)O_(y), Ni_(x)O_(y)N_(z), and or the like. The compound x/y/z ratiois not limited.

In some embodiments, the mask 18 is an EUV mask. In some otherembodiments, the mask 18 is an optical mask.

Still referring to FIGS. 2A and 2B, the pellicle structure 28 ispositioned over the mask 18, in accordance with some embodiments. Asshown in FIGS. 2A and 2B, the pellicle structure 28 includes a pellicleframe 106 positioned over the mask substrate 102 and/or the mask pattern104, in accordance with some embodiments.

In some embodiments, the pellicle frame 106 is made of ceramic material,metal material, glass-ceramic material, another suitable material, or acombination thereof. In some embodiments, suitable process for formingthe pellicle frame 106 includes machining process, injunction moldingprocess, sintering process, photochemical etching process, anotherapplicable process, or a combination thereof.

Still referring to FIGS. 2A and 2B, the pellicle frame 106 includes aside portion 108 with an inside surface S1 and an outside surface S2opposite to each other, in accordance with some embodiments. As shown inFIGS. 2A and 2B, the pellicle frame 106 further includes a bottomsurface S3 connecting the inside surface S1 and the outside surface S2,in accordance with some embodiments.

As shown in FIGS. 2A and 2B, the pellicle-mask structure 100 furtherincludes a vent structure 110 in the side portion 108 and connecting theinside surface S1 and the outside surface S2, in accordance with someembodiments. In some embodiments, the vent structure 110 is made ofceramic material, metal material, glass-ceramic material, anothersuitable material, or a combination thereof. In some embodiments, thevent structure 110 is made of a different material than the pellicleframe 106. In some other embodiments, the vent structure 110 has amaterial the same as that of the pellicle frame 106.

In some embodiments, the vent structure 110 is made with the pellicleframe 106 together. In some embodiments, the vent structure 110 is madeby a photochemical etching process, another applicable process, or acombination thereof.

In some other embodiments, the vent structure 110 and the pellicle frame106 are made separately, and an opening (not shown) is formed in theside portion 108 of the pellicle frame 106. Afterwards, in someembodiments, the vent structure 110 is placed into the opening in theside portion 108 of the pellicle frame 106. Afterwards, in someembodiments, the vent structure 110 is bonded to the pellicle frame 106by a brazing process, a direct diffusion bond process, a eutecticbonding process, another applicable process, or a combination thereof.

In some embodiments, the vent structure 110 is used to prevent thepellicle membrane from breaking during the EUV lithography processes.

Still referring to FIGS. 2A and 2B, the pellicle-mask structure 100further includes a pellicle frame adhesive 112 between the pellicleframe 106 and the mask substrate 102, in accordance with someembodiments.

In some embodiments, the pellicle frame adhesive 112 is made ofcrosslink type adhesive, thermoplastic elastomer type adhesive,polystyrene type adhesive, acrylic type adhesive, epoxy type adhesive,or a combination thereof.

In some embodiments, a surface treatment is performed on the pellicleframe 106 to enhance the adhesive property of the pellicle frame 106 tothe pellicle frame adhesive 112. In some embodiments, the surfacetreatment includes an oxygen plasma treatment, another applicabletreatment, or a combination thereof. However, the embodiments of thepresent disclosure are not limited thereto. In some other embodiments,no surface treatment is performed on the pellicle frame 106.

Still referring to FIGS. 2A and 2B, the pellicle-mask structure 100further includes a pellicle membrane adhesive 114 over the pellicleframe 106, in accordance with some embodiments. In some embodiments, thepellicle membrane adhesive 114 is made of thermoplastic elastomer typeadhesive, acrylic type adhesive, epoxy type adhesive, polystyrene typeadhesive, another suitable material, or a combination thereof. In someembodiments, the pellicle membrane adhesive 114 is made of a materialthat is different from that of the pellicle frame adhesive 112.

Still referring to FIGS. 2A and 2B, the pellicle-mask structure 100further includes a pellicle membrane 116 positioned over the pellicleframe 106 and the pellicle membrane adhesive 114, in accordance withsome embodiments. As shown in FIGS. 2A and 2B, the pellicle membraneadhesive 114 is positioned between the pellicle membrane 116 and thepellicle frame 106, in accordance with some embodiments.

In some embodiments, the pellicle membrane 116 includes a peripheralportion 118 over the pellicle membrane adhesive 114, and a top membraneportion 120 over the peripheral portion 118. In some embodiments, theperipheral portion 118 is made of boron carbide, Si, C, Graphene, carbonnanotube, SiC, SiN, SiO₂, SiON, Zr, Nb, Mo, Cd, Ru, Ti, Al, Mg, V, Hf,Ge, Mn, Cr, W, Ta, Ir, Zn, Cu, Fe, Co, Au, Pt, Sn, Ni, Te, Ag, anothersuitable material, alltrope thereof, or a combination thereof. In someembodiments, the top membrane portion 120 is made of boron carbide, Si,C, SiC, SiN, SiO₂, SiON, Zr, Nb, Mo, Cd, Ru, Ti, Al, Mg, V, Hf, Ge, Mn,Cr, W, Ta, Ir, Zn, Cu, Fe, Co, Au, Pt, Sn, Ni, Te, Ag, another suitablematerial, or a combination thereof. In some embodiments, the peripheralportion 118 and/or the top membrane portion 120 includes multiplelayers. In some embodiments, the pellicle membrane 116 is made bysubstrate backside photo/etching process, another applicable process, ora combination thereof.

In some embodiments, the material of the peripheral portion 118 is thesame as the material of the top membrane portion 120. In some otherembodiments, the material of the peripheral portion 118 is differentfrom the material of the top membrane portion 120. In some embodiments,the thickness of the top membrane portion 120 is in a range from about10 nm to about 100 nm, for example from about 20 nm to about 50 nm.

As shown in FIG. 2A, the pellicle structure 28 and the mask 18 form anenclosed inner space 122 enclosed by the pellicle structure 28 and themask 18, in accordance with some embodiments. As shown in FIG. 2A, thepellicle structure 28 and the mask 18 separate the inner space 122 froman outer space 124, in accordance with some embodiments. As shown inFIG. 2A, the vent structure 110 connects the inner space 122 and theouter space 124, in accordance with some embodiments.

In some cases, the EUV lithography process is performed under anextremely high vacuum environment. However, in some cases, thepellicle-mask structure does not include the vent structure. Therefore,the pressure in the inner space cannot be balanced with the pressure inthe outer space. As a result, the pellicle membrane may be broken due tothe pressure difference.

In some embodiments, since the pellicle-mask structure 100 includes thevent structure 110 connecting the inner space 122 and the outer space124, the pressure in the inner space 122 can be balanced with thepressure in the outer space 124 when the EUV lithography process isbeing performed. As a result, the vent structure 110 prevents thepellicle membrane 116 from breaking when the EUV lithography processesare being performed.

In some embodiments, the pellicle frame 106 has side portions 108, andthe pellicle-mask structure 100 includes at least one vent structure 110positioned in the side portions 108. In some embodiments, as shown inFIG. 2B, the pellicle frame 106 includes four side portions 108, and thepellicle-mask structure 100 includes four vent structures 110. In someembodiments, the four vent structures 110 are positioned in the fourside portions 108 respectively. Many variations and/or modifications canbe made to embodiments of the disclosure. In some embodiments, thepellicle-mask structure 100 includes more vent structures 110. In someembodiments, more than two vent structures 110 are formed in one sideportion 108. In some embodiments, only one vent structure 110 is formedin one side portion 108, and there is no vent structure 110 in the otherthree side portions 108. In some embodiments, the area of one ventstructures 110 is equivalent to that of one side portion 108.

FIG. 3A is a cross-sectional view of the vent structure 110 inaccordance with some embodiments of the present disclosure. As shown inFIG. 3A, the vent structure 110 includes a number of sub-ventilationholes 126, and the sub-ventilation holes 126 have a rectangular shape,in accordance with some embodiments. As shown in FIG. 3A, the ventstructure 110 has a rectangular shape, in accordance with someembodiments. In addition, as shown in FIG. 3A, the sub-ventilation holes126 are distributed evenly. As shown in FIG. 3A, the sub-ventilationholes 126 have substantially the same size. In some embodiments, thesize of the sub-ventilation holes 126 is in a range from about 10 nm toabout 100 μm, for example from about 100 nm to about 10 μm. As shown inFIG. 3A, the vent structure 110 including the sub-ventilation holes 126has a fibrous network structure.

FIG. 3B is a cross-sectional view of the vent structure 110B inaccordance with some embodiments of the present disclosure. As shown inFIG. 3B, the vent structure 110B includes a number of sub-ventilationholes 126B, and the sub-ventilation holes 126B have a circular shape, inaccordance with some embodiments. As shown in FIG. 3B, the ventstructure 110B has a circular shape, in accordance with someembodiments. In addition, as shown in FIG. 3B, the sub-ventilation holes126B are distributed unevenly. As shown in FIG. 3B, the size of one ofthe sub-ventilation holes 126B is different than the size of another oneof the sub-ventilation holes 126B. As shown in FIG. 3B, the ventstructure 110B including the sub-ventilation holes 126B has amesa-porous structure.

FIG. 3C is a cross-sectional view of the vent structure 110C inaccordance with some embodiments of the present disclosure. As shown inFIG. 3C, the vent structure 110C includes a number of sub-ventilationholes 126C, in accordance with some embodiments. As shown in FIG. 3C,the vent structure 110C has a random network type structure.

Referring back to FIGS. 2A and 4A, the pellicle-mask structure 100further includes first heat-dissipating fillers 128 positioned in thepellicle membrane adhesive 114. In some embodiments, the firstheat-dissipating filler 128 is made of aluminum nitride, boron nitride,aluminum oxide, magnesium oxide, silicon oxide, graphite, metal powder,ceramic powder, another suitable material, or a combination thereof.

In some cases, when the EUV lithography processes are being performed, ahigh-energy light beam penetrates through the pellicle membrane.Therefore, the temperature of the pellicle membrane is increased. As aresult, in some cases, the pellicle membrane breaks due to the hightemperature.

In some embodiments, the first heat-dissipating fillers 128 can help todissipate the heat of the pellicle membrane 116 through the pelliclemembrane adhesive 114, the pellicle frame 106, the pellicle frameadhesive 112 to the mask 18 and the EUV lithography apparatus. Thereby,in some embodiments, the temperature of the pellicle membrane 116decreases. As a result, the first heat-dissipating fillers 128 can helpto prevent the pellicle membrane 116 from breaking during the EUVlithography processes. In some embodiments, the first heat-dissipatingfillers 128 can disperse the charge on the pellicle membrane 116 to theEUV lithography apparatus and further help to prevent the pelliclemembrane 116 from breaking.

However, the embodiments of the present disclosure are not limitedthereto. In some other embodiments, no first heat-dissipating fillers128 are positioned in the pellicle membrane adhesive 114.

Referring back to FIGS. 2A and 4A, the pellicle-mask structure 100further includes second heat-dissipating fillers 130 positioned in thepellicle frame adhesive 112. In some embodiments, the secondheat-dissipating filler 130 is made of aluminum nitride, boron nitride,aluminum oxide, magnesium oxide, silicon oxide, graphite, metal powder,ceramic powder, another suitable material, or a combination thereof.

In some embodiments, the second heat-dissipating fillers 130 can alsohelp to dissipate the heat of the pellicle membrane 116 through thepellicle frame adhesive 112 to the mask 18 and the EUV lithographyapparatus. Thereby, in some embodiments, the temperature of the pelliclemembrane 116 decreases. As a result, the second heat-dissipating fillers130 can help to prevent the pellicle membrane 116 from breaking duringthe EUV lithography processes. In some embodiments, the secondheat-dissipating fillers 130 can disperse the charge on the pelliclemembrane 116 and further help to prevent the pellicle membrane 116 frombreaking.

However, the embodiments of the present disclosure are not limitedthereto. In some other embodiments, no second heat-dissipating fillers130 are positioned in the pellicle frame adhesive 112.

Still referring to FIG. 2A, the top membrane portion 120 of the pelliclemembrane 116 has an upper surface 132 and a lower surface 134 oppositeto each other, in accordance with some embodiments. In some embodiments,the pellicle membrane 116 is a continuous film in the top and the bottomportions, and the middle portion of the pellicle membrane 116 has anumber of pores 138. As shown in FIG. 2A, the pellicle membrane 116 hasa porous structure 136, and the porous structure 136 includes pores 138in the pellicle membrane 116. In some embodiments, the pores 138 do notextend from the upper surface 132 to the lower surface 134. In someembodiments, the pores 138 are ring-shaped. Many variations and/ormodifications can be made to embodiments of the disclosure. In someembodiments, the pellicle membrane 116 has a porous structure 136extending from the upper surface 132 to the lower surface 134, inaccordance with some embodiments. For example, the porous structure 136includes a number of pores 138 in the pellicle membrane 116 andconnecting the upper surface 132 and the lower surface 134.

In some embodiments, since the pellicle-mask structure 100 includes theporous structure 136 connecting the inner space 122 and the outer space124, the pressure in the inner space 122 can be balanced with thepressure in the outer space 124 when the EUV lithography process isbeing performed. As a result, the porous structure 136 prevents thepellicle membrane 116 from breaking during the EUV lithographyprocesses.

However, the embodiments of the present disclosure are not limitedthereto. In some other embodiments, no porous structure 136 ispositioned in the pellicle membrane 116.

It should be noted that the exemplary embodiment set forth in FIGS.2A-4B is merely for the purpose of illustration. In addition to theembodiment set forth in FIGS. 2A-4B, the vent structure and thepellicle-mask structure could have other configuration as shown in FIG.5. This will be described in more detail in the following description.Therefore, the present disclosure is not limited to the exemplaryembodiment shown in FIGS. 2A-4B.

Note that the same or similar elements or layers corresponding to thoseof the semiconductor device are denoted by like reference numerals. Insome embodiments, the same or similar elements or layers denoted by likereference numerals have the same meaning and will not be repeated forthe sake of brevity.

FIG. 5 is a cross-sectional view of a pellicle-mask structure 500 inaccordance with some other embodiments of the present disclosure. Asshown in FIG. 5, the vent structure 110 with sub-ventilation holes 126is positioned in the side portion 108 and connects the bottom surface S3and the outside surface S2 through the side portion 108, in accordancewith some embodiments. As shown in FIG. 5, the vent structure 110connects the inner space 122 and the outer space 124, in accordance withsome embodiments.

In addition, as shown in FIG. 5, no porous structure is positioned inthe pellicle membrane 116, in accordance with some embodiments.Furthermore, as shown in FIG. 5, the pellicle-mask structure 100 furtherincludes a heat-dissipating layer 140 positioned over the membraneportion 120 of the pellicle membrane 116, in accordance with someembodiments.

In some embodiments, the heat-dissipating layer 140 is made of Zr, Nb,Mo, Cd, Ru, Ti, Al, Mg, V, Hf, Ge, Mn, Cr, W, Ta, Ir, Zn, Cu, Fe, Co,Au, Pt, Sn, Ni, Te, Ag, oxide such as silicon oxide, nitride such assilicon nitride, oxynitride such as silicon oxynitride, another suitablematerial, or a combination thereof. In some embodiments, theheat-dissipating layer 140 is disposed above or underneath the membraneportion 120. In some embodiments, the heat-dissipating layer 140 is asingle layer. In some embodiments, the heat-dissipating layer 140 is adual or a multiple layers stacking.

In some embodiments, the heat-dissipating layer 140 can further help todissipate the heat of the pellicle membrane 116 through the pelliclemembrane adhesive 114, the pellicle frame 106, the pellicle frameadhesive 112 to the mask 18 and the EUV lithography apparatus. Thereby,in some embodiments, the temperature of the pellicle membrane 116decreases. As a result, the heat-dissipating layer 140 can further helpto prevent the pellicle membrane 116 from breaking during the EUVlithography processes.

Embodiments of the disclosure use the vent structure to balance thepressure in the inner space with the pressure in the outer space whenthe EUV lithography process is being performed. As a result, the ventstructure prevents the pellicle membrane from breaking during the EUVlithography processes.

In addition, in some embodiments, the heat-dissipating fillers in thepellicle frame adhesive and/or pellicle membrane adhesive can help todissipate the heat of the pellicle membrane to the mask and the EUVlithography apparatus. Thereby, in some embodiments, the temperature ofthe pellicle membrane decreases. As a result, the heat-dissipatingfillers can help to prevent the pellicle membrane from breaking duringthe EUV lithography processes.

Furthermore, in some embodiments, the porous structure can balance thepressure in the inner space with the pressure in the outer space whenthe EUV lithography process is being performed. As a result, the porousstructure prevents the pellicle membrane from breaking during the EUVlithography processes. In addition, in some embodiments, thepellicle-mask structure further includes a heat-dissipating layerpositioned over the pellicle membrane to dissipate the heat of thepellicle membrane and prevent the pellicle membrane from breaking duringthe EUV lithography processes.

Embodiments of the disclosure are not limited and may be applied tofabrication processes for any suitable technology generation. Varioustechnology generations include a 20 nm node, a 16 nm node, a 10 nm node,or another suitable node.

In accordance with some embodiments, a pellicle-mask structure isprovided. The pellicle-mask structure includes a mask substrate, apellicle frame over the mask substrate. The pellicle frame includes aside portion with an inside surface and an outside surface opposite toeach other. The pellicle-mask structure also includes a vent structurein the side portion and connecting the inside surface and the outsidesurface, a pellicle membrane over the pellicle frame. The pellicle-maskstructure further includes a pellicle membrane adhesive between thepellicle membrane and the pellicle frame, and a first heat-dissipatingfiller in the pellicle membrane adhesive.

In accordance with some embodiments, a pellicle-mask structure isprovided. The pellicle-mask structure includes a mask substrate, apellicle frame over the mask substrate. The pellicle frame includes aside portion with a bottom surface and an outside surface connected toeach other. The pellicle-mask structure also includes a plurality ofsub-ventilation holes in the side portion and connecting the bottomsurface and the outside surface through the side portion, and a pelliclemembrane over the pellicle frame.

In accordance with some embodiments, a pellicle-mask structure isprovided. The pellicle-mask structure includes a mask substrate, apellicle frame over the mask substrate, a pellicle membrane over thepellicle frame. The pellicle membrane has an upper surface and a lowersurface opposite to each other. The pellicle-mask structure alsoincludes a plurality of pores in the pellicle membrane and connectingthe upper surface and the lower surface.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A pellicle-mask structure, comprising: a masksubstrate; a pellicle frame over the mask substrate, wherein thepellicle frame comprises a side portion with an inside surface and anoutside surface opposite to each other and a bottommost surface; a ventstructure in the side portion and connecting the inside surface and theoutside surface; a pellicle membrane over the pellicle frame; a pelliclemembrane adhesive between the pellicle membrane and the pellicle frame;a first heat-dissipating filler in the pellicle membrane adhesive; and apellicle frame adhesive sandwiched by the bottommost surface of the sideportion of the pellicle frame and the mask substrate, wherein a portionof the bottommost surface of the side portion of the pellicle frame isin contact with a top surface of the pellicle frame adhesive, and a restof the bottommost surface of the side portion of the pellicle frame issuspended, and wherein a first lateral width of the pellicle membraneadhesive is greater than a second lateral width of the pellicle frameadhesive.
 2. The pellicle-mask structure as claimed in claim 1, whereinthe vent structure comprises a plurality of sub-ventilation holes,wherein the plurality of the sub-ventilation holes have a rectangularshape or a circular shape.
 3. The pellicle-mask structure as claimed inclaim 1, wherein the pellicle frame is made of ceramic material, metalmaterial, glass-ceramic material or a combination thereof.
 4. Thepellicle-mask structure as claimed in claim 1, wherein the ventstructure is made of ceramic material, metal material, glass-ceramicmaterial, or a combination thereof.
 5. The pellicle-mask structure asclaimed in claim 1, wherein the vent structure is made of a materialthat is different than that of the pellicle frame.
 6. The pellicle-maskstructure as claimed in claim 1, wherein the first heat-dissipatingfiller is made of aluminum nitride, boron nitride, aluminum oxide,magnesium oxide, silicon oxide, graphite, metal powder, ceramic powder,or a combination thereof.
 7. The pellicle-mask structure as claimed inclaim 1, further comprising: a second heat-dissipating filler in thepellicle frame adhesive.
 8. The pellicle-mask structure as claimed inclaim 7, wherein the second heat-dissipating filler is made of aluminumnitride, boron nitride, aluminum oxide, magnesium oxide, silicon oxide,graphite, metal powder, ceramic powder, or a combination thereof.
 9. Thepellicle-mask structure as claimed in claim 1, wherein a first sidewallof the pellicle frame adhesive is substantially aligned with a firstsidewall of the pellicle membrane adhesive, and a second sidewall of thepellicle frame adhesive is indented from a second sidewall of thepellicle membrane adhesive.
 10. The pellicle-mask structure as claimedin claim 1, further comprising: a mask pattern between the masksubstrate and the pellicle frame adhesive, wherein the rest of thebottommost surface of the side portion of the pellicle frame, an innersidewall of the pellicle frame adhesive and a top surface of the maskpattern enclose a space.
 11. The pellicle-mask structure as claimed inclaim 10, wherein an interface between the space and the pellicle frameadhesive is between a first sidewall of pellicle membrane adhesive and asecond sidewall of the pellicle membrane adhesive.
 12. A pellicle-maskstructure, comprising: a mask substrate; a pellicle frame over the masksubstrate, wherein the pellicle frame comprises a side portion with abottommost surface having a suspended section and an outside lateralsurface connected to each other, wherein the pellicle frame furthercomprises a plurality of sub-ventilation holes in the side portionexposing the suspended section of the bottommost surface and the outsidelateral surface through the side portion; and a pellicle membrane overthe pellicle frame.
 13. The pellicle-mask structure as claimed in claim12, wherein each of the plurality of the sub-ventilation holes hassubstantially the same size.
 14. The pellicle-mask structure as claimedin claim 12, wherein at least one sub-ventilation hole has a first size,whereas at least another one of the sub-ventilation holes has a secondsize, wherein the first size is different from the second size.
 15. Thepellicle-mask structure as claimed in claim 12, further comprising: aheat-dissipating layer directly above and in contact with a top surfaceof the pellicle membrane, wherein no porous structure is positioned inthe pellicle membrane.
 16. The pellicle-mask structure as claimed inclaim 12, further comprising: a pellicle frame adhesive sandwiched bythe bottommost surface of the side portion of the pellicle frame and themask substrate, wherein a portion of the bottommost surface of the sideportion of the pellicle frame is in contact with a top surface of thepellicle frame adhesive, and the suspended section of the bottommostsurface of the side portion of the pellicle frame is not in contact withthe top surface of the pellicle frame adhesive, wherein at least one ofthe plurality of sub-ventilation holes passes through the suspendedsection of the bottommost surface of the side portion of the pellicleframe that is not in contact with the top surface of the pellicle frameadhesive.
 17. The pellicle-mask structure as claimed in claim 16,further comprising: a mask pattern between the pellicle frame adhesiveand the mask substrate, wherein the mask pattern has a plurality ofopenings exposing the mask substrate.
 18. A pellicle-mask structure,comprising: a mask substrate; a mask pattern positioned over the masksubstrate; a pellicle frame over the mask substrate and having an insidesurface and an outside surface opposite to each other and a bottommostsurface facing the mask substrate; a pellicle membrane over the pellicleframe, wherein the pellicle membrane has an upper surface and a lowersurface opposite to each other, and a plurality of pores in the pelliclemembrane and connecting the upper surface and the lower surface; and apellicle frame adhesive sandwiched by the bottommost surface of thepellicle frame and the mask substrate, wherein a portion of thebottommost surface of the pellicle frame is in contact with a topsurface of the pellicle frame adhesive and closer to the outside surfaceof the pellicle frame, and a rest of the bottommost surface of thepellicle frame is not in contact with the top surface of the pellicleframe adhesive and closer to the inside surface of the pellicle frame,and wherein the outside surface of the pellicle frame is substantiallyaligned with an outer sidewall of the pellicle frame adhesive, and therest of the bottommost surface of the pellicle frame, an inner sidewallof the pellicle frame adhesive and a top surface of the mask patternenclose a space.
 19. The pellicle-mask structure as claimed in claim 18,wherein the pellicle membrane is made of boron carbide, Si, C, grapheme,carbon nanotube (CNT), SiC, SiN, SiO₂, SiON, Zr, Nb, Mo, Cd, Ru, Ti, Al,Mg, V, Hf, Ge, Mn, Cr, W, Ta, Ir, Zn, Cu, Fe, Co, Au, Pt, Sn, Ni, Te,Ag, allotrope thereof, or a combination thereof.
 20. The pellicle-maskstructure as claimed in claim 18, wherein the pellicle frame comprises aside portion with the inside surface and the outside surface, whereinthe pellicle-mask structure further comprises: a vent structure in theside portion and connecting the inside surface and the outside surface.